Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Patent
1996-12-06
2000-01-11
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
427527, 438515, 438918, C23C 1414
Patent
active
060133325
ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.
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"Shallow Junction Formation By Polyatomic Cluster Ion Implantation", by D. Takeuchi, N. Toyoda, N. Shimada, J. Matsuo and I. Yamada; Technical Report of IEIC, SDX 95-19G, pp. 83-89, Dec. 1995.
Goto Ken-ichi
Kase Masataka
Matsuo Jiro
Shimada Norihiro
Takeuchi Daisuke
Beck Shrive
Chen Bret
Fujitsu Limited
Japan Science and Technology Corporation
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