Boron doped semiconductor materials and method for producing sam

Details Boron doped semiconductor materials and method for producing sam Boron doped semiconductor materials and method for producing sam

1984-11-05

1986-11-25

Smith, John D.

Coating processes

Electrical product produced

Photoelectric

427 85, 427 86, 427 87, H01L 3104, B05D 512

Patent

active

046248625

ABSTRACT:
An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

REFERENCES:
patent: 3969163 (1976-07-01), Wakefeld
patent: 4410558 (1983-10-01), Izu

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