Boron doped CoFe for GMR free layer

Details Boron doped CoFe for GMR free layer Boron doped CoFe for GMR free layer

2005-01-18

2005-01-18

Letscher, George (Department: 2653)

Dynamic magnetic information storage or retrieval

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Magnetoresistive reproducing head

Reexamination Certificate

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06844999

ABSTRACT:
Prior art gains in GMR ratio resulting from use of NiFeCr as a seed layer were offset by the resulting high values obtained for Hcand Hk. This problem has been overcome by combining a seed layer of NiCr or NiFeCr with a free layer of boron doped CoFe. Additionally, when using a synthetic pinned layer, further improvement is achieved by using boron doped CoFe for the two antiparallel layers.

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