Boron containing multilayer coatings and method of fabrication

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359584, 359585, 359589, 428688, 428698, 428704, B32B 1800, C23C 1435

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active

056702523

ABSTRACT:
Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition.

REFERENCES:
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patent: 5203977 (1993-04-01), Makowiecki
patent: 5286361 (1994-02-01), Makowiecki
patent: 5310603 (1994-05-01), Fukuda
patent: 5333726 (1994-08-01), Makowiecki
patent: 5381944 (1995-01-01), Makowiecki
patent: 5382342 (1995-01-01), Bionta
patent: 5389445 (1995-02-01), Makowiecki
patent: 5392981 (1995-02-01), Makowiecki
patent: 5433988 (1995-07-01), Fukuda
SPIE vol. 984, Manufacture, Structure and Performance of W/B.sub.4 C Multilayer X-Ray Mirrors, A.F. Jankowski et al., pp. 64-74, 1988.
J. Vac. Sci. Technol. A8(6), Magnetron Sputtered Boron Films and Ti/B Multilayer Structures, D.M. Makowiecki et al., pp. 3910-3913, Nov./Dec. 1990.
7th CIMTEC, Densification Studies of Refractory Materials Using Hot Isostatic Pressing (HIP) And Tantalum Containment, C. Hoenig et al., pp. 1337-1345, Jun. 1990.
UCR-JC-106571, "Magnetron Sputter Deposition of Boron and Boron Carbide", M. McKernan et al., Apr. 1991.

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