Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Patent
1997-09-19
2000-02-15
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
257200, 257201, H01L 310328
Patent
active
060256117
ABSTRACT:
The present invention relates to the fabrication of a boron carbide/boron diode on an aluminum substrate, and a boron carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron carbide (B.sub.5 C) acts as a p-type material. Both boron and boron carbide (B.sub.5 C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. We have doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadecaborane (orthocarborane) was used to grow the boron carbide while nickelocene (Ni(C.sub.5 H.sub.5)2) was used to introduce nickel into the growing film. The doping of nickel transformed a B.sub.5 C material p-type relative to lightly doped n-type silicon to an n-type material. Both p-n heterojunction diodes and n-p heterojunction diodes with n- and p-type Si [1,1,1] respectively. With sufficient partial pressures of nickelocene in the plasma reactor diodes with characteristic tunnel diode behavior can be successfully fabricated.
REFERENCES:
patent: 3224913 (1965-12-01), Ruehrwein
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3565703 (1971-02-01), Kamath
patent: 4348428 (1982-09-01), Rockley
patent: 4362766 (1982-12-01), Dannhauser et al.
patent: 4569855 (1986-02-01), Matsuda et al.
patent: 4766482 (1988-08-01), Smeltzer et al.
patent: 4957773 (1990-09-01), Spencer et al.
patent: 5030583 (1991-07-01), Beetz, Jr.
patent: 5061322 (1991-10-01), Asano
patent: 5070027 (1991-12-01), Mito et al.
patent: 5468978 (1995-11-01), Dowben
patent: 5632669 (1997-05-01), Azarian et al.
patent: 5750231 (1998-05-01), Ahlert et al.
Boag et al., "Designing of organometallics for vapor phase metallization of plastics," Metallized Plastics 4: Fundamental and Applied Aspects, (Mittal, Ed.) Plenum Press: New York, pp. 1-7 (1996).
Byun et al., Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation, Appl. Phys. Lett., vol. 64, pp. 1968-1970 (1994).
Byun et al., "Synchrotron radiation induced decomposition of closo-1,2-dicarbadodecaborane," Jpn. J. Appl. Phys., vol. 34, Part 2, No. 7B, pp. L941-L944 (1995).
Byun et al., "Comparison of different chemical vapor deposition methodologies for the fabrication of heterojunction boron-carbide diodes," Nanostructured Materials, vol. 5, pp. 465-471 (1995).
Callahan et al., "Ten years of Metallocarboranes," Adv. Organometallic Chem., vol. 14, pp. 145-186 (1976).
Carpinelli et al., "Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo-1,2-dicarbadodecaborane on Si(111)," J. Vacuum Sci. & Tech. B, vol. 13(3), pp. 1203-1206 (1995).
Cava et al., "Stabilization of superconducting LnPt.sub.2 B.sub.2 C by partial substitution of gold for platimun," Physica C, vol. 226, pp. 170-174 (1994).
Cava et al., "Superconductivity in the quaternary intermetallic compounds LnNi.sub.2 B.sub.2 C," Nature, vol. 367, pp. 252-253 (1994).
Chauvet et al., "Spin susceptability of boron carbides: dissociation of singlet small bipolarons," Phys. Rev. B, vol. 53(21), pp. 14450-14457 (1996).
Chynoweth et al., "Excess tunnel current in silicon Esaki junctions," Phys. Rev., vol. 121, pp. 684-694 (1961).
Claassen, "Excess and hump current in Esaki diodes," J. Appl. Phys., vol. 32, pp. 2372-2378 (1961).
Dowben et al., "Nickel doping of boron carbide and Fermi level shifts," pp. 1-6, unpublished manuscript.
Epstein et al., "Lithium-doped gallium arsenide tunnel diodes," J. Appl. Phys., vol. 35, pp. 3050-3051 (1964).
Hawthorne et al. ".pi.-Dicarbollyl derivatives of the transition metals. Metallocene analogs," J. Am. Chem. Soc., vol. 90, pp. 879-896 (1968).
Hitchcock et al., "Inner-shell excitation of boranes and carboranes," J. Phys. Chem., vol. 97, pp. 8171-8181 (1993).
Hitchcock et al., "Inner-shell excitation spectroscopy of closo-carboranes," J. Phys. Chem. B, vol. 101, pp. 3483-3493 (1997).
Hwang et al., "Fabrication of boron-carbide/boron heterojunction devices," Appl. Phys. Lett., vol. 68(11), pp. 1495-1497 (1996).
Hwang et al., "Nickel doping of boron carbide grown by plasma enhanced chemical vapor deposition," J. Vacuum Sci. & Tech. B, vol. 14(4), pp. 2957-2960 (1996).
Hwang et al., "Phosphorus doping of boron carbon alloys," Mat. Res. Soc. Symp. Proc., vol. 452, pp. 1031-1036 (1997).
Hwang et al., "Fabrication of n-type nickel doped B.sub.5 C.sub.1+.delta. homojunction and heterojunction diodes," Appl. Phys. Lett., vol. 70(8), pp. 1028-1030 (1997).
Kane, "Theory of tunneling," J. Appl. Phys., vol. 32, pp. 83-91 (1961).
Karlovsky, "The curvature coefficient of germanium tunnel and backward diodes," Solid State Electron, vol. 10, pp. 1109-1111 (1967).
Kim et al., "Chemical vapor deposition of bron and boron nitride from decaborane(14)," J. Vacuum Sci. & Tech. A, vol. 7(4), pp. 2796-2799 (1989).
Kim et al., "Fabricating magnetic Co-Ni-C thin-film alloys by organometallic chemical vapor deposition," J. Appl. Phys., vol. 70, pp. 6062-6064 (1991).
Kobayashi et al., "Thermal and ion beam induced reactions in Ni thin films on BP(100)," Appl. Phys. Lett., vol. 54, pp. 1914-1915 (1989).
Kobayashi et al., "Thermal and ion beam induced reactions in Ni on BP," Mater. Res. Soc. Sympp. Proc., vol. 162, pp. 595-600 (1990).
Kuhlmann et al., IR optical properties of Fe-doped .beta.-rhombohedral boron, AIP Conf. Proc., vol. 231 (Boron-Rich Solids), pp. 340-343 (1991).
Kuhlmann et al., Influence of interstitially soluted iron on structural, optical and electrical properties of .beta.-rhombohedral boron, J. Alloys and Compounds, vol. 186, pp. 187-200 (1992).
Kuhlmann et al., "Ionization of interstitial iron atoms in .beta.-rhombohedral boron," Phys. Stat. Sol., vol. 187, pp. 43-59 (1995).
Lee et al., "Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes," J. Appl. Phys., vol. 72(10), pp. 4925-4933 (1992).
Lee et al., "Conductance in microcrystalline B.sub.1-x C.sub.x /Si heterojunction diodes," Mater. Res. Soc. Symp. Proc., vol. 283, pp. 483-488 (1993).
Lee et al., "The structural homogeneity of boron carbide thin films fabricated using plasma-enhanced chemical vapor deposition from B.sub.5 H.sub.9 +CH.sub.4," J. Appl. Phys., vol. 74(11), pp. 6919-6924 (1993).
Lee et al., "The properties of boron carbide/silicon heterojunction diodes fabricated by plasma-enhanced chemical vapor deposition," J. Appl. Phys., vol. A58, pp. 223-227 (1994).
Lewis et al., "Chemical vapor deposition of boron-carbon films using organometallic reagents," Mat. Lett., vol. 27, pp. 327-332 (1996).
Logan et al., "Effect of degenerate semiconductor band structure on current-voltage characteristics of silicon tunnel diodes," Phys. Rev., vol. 131, pp. 89-95 (1963).
Lund et al., "Boron phosphide on silicon for radiation detectors," Mat. Sci. Soc. Sympp. Proc., vol. 162, pp. 601-604 (1990).
McIlroy et al., "The coadsorption of metals and molecular icosahedra on Cu(100)," Surface Science, vol. 328, pp. 47-57 (1995).
McIlroy et al., "Band gaps of doped and undoped films of molecular icosahedra," Mat. Sci. Eng., vol. A217/218, pp. 64-68 (1996).
McIlroy et al., "The incorporation of nickel and phosphorus dopants into boron-carbon alloy thin films," Applied Physics A, vol. 67, pp. 335-342 (1998).
Mazurowski et al., "Novel methods for deposition of boron carbide films," in Plasma Processing and Synthesis of Materials, MRS Symposium Proceedings, (Apelian et al., Eds.) MRS: Pittsburgh, PA, vol. 190, pp. 101-106. (1991).
Mazurowski et al., "Characterization of boron carbide films formed by PECVD," in Wide Band Gap Semiconductors, MRS Symposium Proceedings, (Moustakas et al., Eds.) MRS: Pittsburgh, PA, vol. 242, pp. 637-642 (1992).
Meyerhofer et al., "Degenerate germanium. I. Tunnel, excess, and thermal current in tunnel diodes," Phys. Rev., vol. 126, pp. 1329-1341 (1962).
Minton et al., "Theoretical and experimental analysis of germanium tunnel diode cha
Bui Huy
Hardy David B.
The Board of Regents of the University of Nebraska
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