Borderless diffusion contact process and structure

Details Borderless diffusion contact process and structure Borderless diffusion contact process and structure

1980-08-29

1983-10-18

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29591, 148187, 148188, H01L 21225, H01L 21265

Patent

active

044097220

ABSTRACT:
Electrical contacts to diffused regions in a semiconductor substrate are made by a process which reduces the space needed in memory or logic cell layouts. The contacts are made such that they overlap, but are insulated from, adjacent conductors. The contacts are formed in a manner which avoids shorting of the diffused junctions to adjacent structures without being limited by lithographic overlay tolerances.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 3967981 (1976-07-01), Yamazaki
patent: 4074304 (1978-02-01), Shiba
patent: 4157269 (1979-06-01), Ning et al.
patent: 4160991 (1979-07-01), Anantha et al.
patent: 4251571 (1981-02-01), Garbarino et al.
patent: 4317274 (1982-03-01), Yasunari
patent: 4356041 (1982-10-01), Kosa
Plisken, IBM Journal of Research and Development, vol. 10, No. 3, May 1966.

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