Bootstrap diode emulator with dynamic back-gate biasing

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With bootstrap circuit

Reexamination Certificate

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Details

C323S282000, C363S098000

Reexamination Certificate

active

10712893

ABSTRACT:
A bootstrap diode emulator circuit for use in a half-bridge switching circuit employing transistors connected to one another in a totem pole configuration, a driver circuit for driving the transistors, and a bootstrap capacitor for providing power to the high-side driver circuit. The bootstrap diode emulator circuit includes an LDMOS transistor having a gate, a back-gate, a source and a drain, the drain of the LDMOS transistor being coupled to the high-side supply node, the source of the LDMOS transistor being coupled to the low-side supply node; a gate control circuit electrically coupled to the gate of the LDMOS transistor, and a dynamic back-gate biasing circuit electrically coupled to the back-gate of the LDMOS transistor. The dynamic back-gate biasing circuit is operable to dynamically bias the back-gate of the LDMOS transistor when the LDMOS is turned on by applying a voltage to the back-gate of the LDMOS transistor that is close to but slightly lower than a voltage of the drain of the LDMOS transistor.

REFERENCES:
patent: 5077490 (1991-12-01), Brown
patent: 5373435 (1994-12-01), Jayaraman et al.
patent: 5502632 (1996-03-01), Warmerdam et al.
patent: 6643145 (2003-11-01), Harrison
patent: 6815936 (2004-11-01), Wiktor et al.
patent: 0 743 752 (1996-11-01), None

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