Boosting to control programming of non-volatile memory

Details Boosting to control programming of non-volatile memory Boosting to control programming of non-volatile memory

2006-04-04

2006-04-04

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185190

Reexamination Certificate

active

07023733

ABSTRACT:
A system is disclosed for programming non-volatile memory with greater precision. In one embodiment, the system includes applying a first phase of a boosting signal to one or more unselected word lines for a set of NAND strings, applying a programming level to selected bit lines of the NAND strings while applying the first phase of the boosting signal, and applying an inhibit level to unselected bit lines of the NAND strings while applying the first phase of the boosting signal. Subsequently, a second phase of the boosting signal is applied to the one or more unselected word lines and the signal(s) on the selected bit lines are changed by applying the inhibit level to the selected bit lines so that NAND strings associated with the selected bit lines will be boosted by the second phase of the boosting signal. A program voltage signal is applied to a selected word line in order to program storage elements connected to the selected word line.

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