Booster circuit for non-volatile semiconductor memory device

Details Booster circuit for non-volatile semiconductor memory device Booster circuit for non-volatile semiconductor memory device

2005-05-31

2005-05-31

Lam, David (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185210, C365S189110

Reexamination Certificate

active

06901009

ABSTRACT:
A detection circuit detects a rising time period between a power supply ON time or a reset time and a time when a boosted voltage reaches a standby voltage, and outputs a detection signal representing a result of the detection. An oscillation circuit generates an outputs a clock signal having a constant frequency which is lower than a frequency in an ordinary state, while the detection signal is at a high level. A charge pump circuit boosts a power source voltage in response to the input clock signal of the constant frequency and causes the boosted voltage to gently rise from the power source voltage, thereby effectively interfering with an increase in reference voltage accompanied by the increase in boosted voltage.

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