Boost converter with integrated high power discrete FET and...

Details Boost converter with integrated high power discrete FET and... Boost converter with integrated high power discrete FET and...

2011-08-30

2011-08-30

Berhane, Adolf (Department: 2838)

Electricity: power supply or regulation systems

In shunt with source or load

Using choke and switch across source

C257S777000

Reexamination Certificate

active

08008897

ABSTRACT:
A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package.

REFERENCES:
patent: 4344081 (1982-08-01), Pao et al.
patent: 5126807 (1992-06-01), Baba et al.
patent: 5242845 (1993-09-01), Baba et al.
patent: 5260227 (1993-11-01), Farb et al.
patent: 5578508 (1996-11-01), Baba et al.
patent: 5965947 (1999-10-01), Nam et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6621121 (2003-09-01), Baliga
patent: 6699775 (2004-03-01), Bol et al.
patent: 6975023 (2005-12-01), Oliver et al.
patent: 7195952 (2007-03-01), Vinn et al.
patent: 7436070 (2008-10-01), Uno et al.
patent: 7443648 (2008-10-01), Cutter et al.
patent: 7750447 (2010-07-01), Chang et al.
patent: 2004/0169262 (2004-09-01), Oliver et al.
patent: 2006/0073023 (2006-04-01), Ghoshal et al.
patent: 2008/0024102 (2008-01-01), Hebert et al.
patent: 2008/0035987 (2008-02-01), Hebert
patent: 2008/0067584 (2008-03-01), Lui
patent: 2008/0304306 (2008-12-01), Chang et al.
patent: 1691327 (2005-11-01), None
patent: 2006020921 (2006-02-01), None
U.S. Appl. No. 11/522,669 entitled “Inverted-Trench Grounded-Source FET Structure With Trenched Source-Body Short Electrode” to Sik K. Lui et al., filed Sep. 16, 2006.
U.S. Appl. No. 11/761,313 entitled “High Voltage and High Power Boost Converter With Co-Packaged Schottky Diode” to Allen Chang et al., filed Jun. 11, 2007.
U.S. Appl. No. 11/500,810 entitled “Inverted-Trench Grounded-Source FET Structure Using Conductive Substrates, With Highly Doped Substrates” to Francois Hebert et al, filed Aug. 7, 2006.
Chinese Office Action dated Nov. 27, 2009 issued for Chinese patent application No. 2008101098622.U.S.
U.S. Appl. No. 12/784,391, filed May 20, 2010.
Notice of Allowance and Fee(s) Due dated Feb. 22, 2010 issued for U.S. Appl. No. 11/761,313.
Office Action dated May 11, 2009 issued for U.S. Appl. No. 11/761,313.
Final Office Action dated Dec. 10, 2009 for U.S. Appl. No. 11/761,313.
Zetex Semiconductors, Datasheet for ZXD1615, Aug. 2004, Issue 3, pp. 1-12.

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