Bonding technique to join two or more silicon wafers

Details Bonding technique to join two or more silicon wafers Bonding technique to join two or more silicon wafers

1987-05-13

1989-08-08

Weston, Caleb

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

156 89, 165 801, 165 802, 165 803, 165146, 165185, B32B 3114

Patent

active

048549860

ABSTRACT:
A method of manufacturing semiconductors formed of bonded wafers. The method includes the use of a heat sink. The heat sink induces a temperature gradient to occur on a single area at the interface of the wafers with the gradient moving rapidly across the remaining surface. As a result of the temperature front, the voids or uncontacted areas between the wafers which result in a typical bonding process are substantially reduced, thereby providing a stronger and more effective bond.

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