Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
1998-06-22
2001-09-25
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S674000, C257S676000, C438S111000, C438S123000
Reexamination Certificate
active
06294824
ABSTRACT:
FIELD OF THE INVENTION
This invention relates to the field of semiconductor manufacture, and more particularly to a semiconductor assembly having a lead frame or a similar support.
BACKGROUND OF THE INVENTION
To manufacture a leads-over-chip (LOC) semiconductor device such as a memory device, a microprocessor, or logic device, a front circuit side of a semiconductor die is attached to a lead frame using various adhesives such as double sided tape. Various LOC and backside attach designs are described in U.S. Pat. Nos. 5,140,404; 5,177,032; 5,256,598; 5,304,842, each assigned to Micron Technology, Inc. and U.S. Pat. No. 4,862,245 assigned to International Business Machines Corp. A ceramic LOC assembly is described in U.S. Pat. No. 5,107,328, also assigned to Micron Technology, Inc. Each of these patents is incorporated herein by reference.
To successfully manufacture a semiconductor device having an LOC design, thermal coefficients of expansion (TCE) of the die, the lead frame, and the attach material must closely match. A TCE mismatch between the three components can damage the die if there is a thermal mismatch between the attach material and the die, or can cause the die to separate from the lead frame if there is a TCE mismatch between the attach material and the lead frame.
A semiconductor assembly which reduces problems associated with thermal mismatch would be advantageous.
SUMMARY OF THE INVENTION
One embodiment of an inventive method for forming a semiconductor assembly comprises the steps of forming a protective material over a semiconductor wafer section, then contacting a lead frame with the protective material. Subsequent to contacting the wafer section and the protective material, the protective material can be removed from the wafer section.
Objects and advantages will become apparent to those skilled in the art from the following detailed description read in conjunction with the appended claims and the attached drawings.
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Brooks Mike
Wood Alan G.
Micro)n Technology, Inc.
Picardat Kevin M.
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