Bonding structure with buffer layer and method of forming...

Electricity: conductors and insulators – Conduits – cables or conductors – Preformed panel circuit arrangement

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C174S256000, C361S790000, C257SE23021, C257S781000, C257S782000, C257S783000, C257S786000, C438S613000, C438S614000, C438S615000, C438S616000, C438S617000

Reexamination Certificate

active

10829060

ABSTRACT:
A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

REFERENCES:
patent: 5407506 (1995-04-01), Goetz et al.
patent: 5427638 (1995-06-01), Goetz et al.
patent: 5714252 (1998-02-01), Hogerton et al.
patent: 5889326 (1999-03-01), Tanaka
patent: 6309737 (2001-10-01), Hirashima et al.
patent: 6333104 (2001-12-01), Perry et al.
patent: 6337522 (2002-01-01), Kang et al.
patent: 6373714 (2002-04-01), Kudoh et al.
patent: 6586322 (2003-07-01), Chiu et al.
patent: 6618269 (2003-09-01), Chen
patent: 6739027 (2004-05-01), Lauffer et al.
patent: 6740823 (2004-05-01), Shimizu
patent: 6744142 (2004-06-01), Liu et al.
patent: 6858111 (2005-02-01), Perry et al.
patent: 6872984 (2005-03-01), Leung
patent: 7069645 (2006-07-01), Ishikawa et al.
patent: 2003/0005582 (2003-01-01), Tatoh et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Bonding structure with buffer layer and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bonding structure with buffer layer and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bonding structure with buffer layer and method of forming... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3878950

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.