Bonding structure of dielectric substrates for impedance matchin

Details Bonding structure of dielectric substrates for impedance matchin Bonding structure of dielectric substrates for impedance matchin

1994-11-28

1995-12-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257773, 257920, 257664, 257777, H05K 310, H01L 2312, H01L 2504

Patent

active

054770858

ABSTRACT:
The present invention provides a bonding structure between a dielectric substrate made of a dielectric material and a packaging substrate made of a heat conductive material involved in microwave integrated circuits. Both the dielectric and heat conductive materials have different coefficients of thermal expansions. The dielectric substrate has a top surface formed thereon with a top metallization pattern constituting impedance matching circuits and a bottom surface being bonded through a soldering agent to the packaging substrate. The bottom surface of the dielectric substrate has a bottom metallization pattern being selectively formed in a predetermined area thereon so that the soldering agent is applied only on the bottom metallization pattern to bond the dielectric and packaging substrates with each other. The bottom metallization pattern may be the same as the top metallization pattern. Alternatively, the bottom metallization pattern may comprise a plurality of almost rectangles aligned in matrix on the bottom surface of the dielectric substrate.

REFERENCES:
patent: 4839712 (1989-06-01), Manodaly et al.
patent: 5198964 (1993-03-01), Ito et al.
patent: 5291064 (1994-03-01), Kurokawa
patent: 5317194 (1994-05-01), Sako
patent: 5355102 (1994-10-01), Kornrumpf et al.
patent: 5371405 (1994-12-01), Kagawa
patent: 5382832 (1995-01-01), Buti et al.

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