Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – By pressure alone
Reexamination Certificate
2007-07-03
2007-07-03
Lam, Cathy F. (Department: 1775)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
By pressure alone
C257S778000, C257S779000, C257S784000, C257S786000
Reexamination Certificate
active
11047646
ABSTRACT:
A bonding structure of device packaging includes a first substrate and a second substrate. The surfaces of the first substrate have metal pads and a first bonding layer connected to the second substrate whose surfaces have a second bonding layer and electrodes. The first bonding layer is combined with the second bonding layer, and the metal pads are in electrical communications with the electrodes. The second substrate may be a flexible substrate to decrease the strain between the first substrate and the second substrate.
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Industrial Technology Research Institute
Lam Cathy F.
Rabin & Berdo P.C.
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