Bonding pad structures for semiconductor integrated circuits

Details Bonding pad structures for semiconductor integrated circuits Bonding pad structures for semiconductor integrated circuits

1993-10-26

1998-02-17

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

257780, H01L 2348, H01L 2352, H01L 2940

Patent

active

057194483

ABSTRACT:
A bonding pad structure for a semiconductor integrated circuit permits miniaturization of the bonding pad size by utilizing an opening in an overlying insulating layer to an exposed surface of an underlying multi-layer, interconnecting wiring of the integrated circuit, constituting a bonding pad for exposure to wire bonding. As a result, miniaturization of bonding pad size can be accommodated with integrated circuit scale reduction while maintaining good bonding adhesion strength at the bonding pad for subsequent wiring bonding.

REFERENCES:
patent: 4471376 (1984-09-01), Morcom et al.
patent: 4824830 (1989-04-01), Us et al.
patent: 5023697 (1991-06-01), Tsumura
patent: 5289038 (1994-02-01), Amano
"Hardness", Van Nostrand's Scientific Encyclopedia, vol. I, pp. 1403-1404 (19 ).
"Titanium", Van Norstrand's Scientific Encyclopedia, vol. II, pp. 2839-2841 (19 ).
Western Tube v. Rainear, 156 F. 49, 50 (E.D.Pa. 1907).

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