Bonding pad structure for integrated circuit (I)

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

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Details

257786, 257784, 257773, 257774, 257734, 438652, 438614, 438666, H01L 2348

Patent

active

060021799

ABSTRACT:
A bonding pad structure formed on a semiconductor substrate comprises an insulating layer, a conducting pad, a passivation layer, and a buffer layer. The insulating layer is formed on the semiconductor substrate. The conducting pad is formed on the insulating layer, and the passivation layer is formed to cover peripherals of the conducting pad forming an overhang region therebetween. However, the buffer layer is patterned and etched to form a plurality of either islands or openings between the insulating layer and the conducting pad but withon the range of the overhang region. Accordingly, peeling resistance ability can be enhanced via a form of mechanical interlocking. In addition, a portion of the overhang region can be wider than the other portion thereof in order to further intensify the adhesion between the conducting pad and the passivation layer.

REFERENCES:
patent: 5248903 (1993-09-01), Heim
patent: 5372969 (1994-12-01), Moslehi
patent: 5707894 (1998-01-01), Hsiao
patent: 5723822 (1998-03-01), Lien
patent: 5736791 (1998-04-01), Fujiki et al.

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