Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Patent
1998-03-13
1999-12-14
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
257786, 257784, 257773, 257774, 257734, 438652, 438614, 438666, H01L 2348
Patent
active
060021799
ABSTRACT:
A bonding pad structure formed on a semiconductor substrate comprises an insulating layer, a conducting pad, a passivation layer, and a buffer layer. The insulating layer is formed on the semiconductor substrate. The conducting pad is formed on the insulating layer, and the passivation layer is formed to cover peripherals of the conducting pad forming an overhang region therebetween. However, the buffer layer is patterned and etched to form a plurality of either islands or openings between the insulating layer and the conducting pad but withon the range of the overhang region. Accordingly, peeling resistance ability can be enhanced via a form of mechanical interlocking. In addition, a portion of the overhang region can be wider than the other portion thereof in order to further intensify the adhesion between the conducting pad and the passivation layer.
REFERENCES:
patent: 5248903 (1993-09-01), Heim
patent: 5372969 (1994-12-01), Moslehi
patent: 5707894 (1998-01-01), Hsiao
patent: 5723822 (1998-03-01), Lien
patent: 5736791 (1998-04-01), Fujiki et al.
Chan Chin-Jong
Chung Hsiu-Hsin
Lin Rueyway
Thai Luan
Thomas Tom
Winbond Electronics Corporation
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