Bonding pad structure and method for making the same

Details Bonding pad structure and method for making the same Bonding pad structure and method for making the same

2006-06-30

2008-12-30

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S686000, C257SE21170, C257SE21006, C257SE21499, C257SE21503

Reexamination Certificate

active

07470994

ABSTRACT:
A semiconductor device includes a substrate with a dielectric layer thereon, a stack of interconnection structures in the dielectric layer, each interconnection structure including a conductive layer and a layer of plugs connecting the conductive layer, at least a layer of plugs including a crack stopper, and a bonding pad structure with a predetermined bump area thereon, overlying the stack of interconnection structures, wherein the crack stopper is formed along an edge of a projection area corresponding to the predetermined bump area.

REFERENCES:
patent: 6815619 (2004-11-01), Iwasaki et al.
patent: 7253363 (2007-08-01), Iwasaki et al.
patent: 2006/0264035 (2006-11-01), Nogami
patent: 2007/0158788 (2007-07-01), Yang
patent: 1399334 (2003-02-01), None

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