Bonding pad metallization for semiconductor devices

Details Bonding pad metallization for semiconductor devices Bonding pad metallization for semiconductor devices

1981-07-31

1984-01-03

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 65, 357 81, 372 36, H01L 2946, H01L 2348

Patent

active

044245270

ABSTRACT:
The invention is directed to a bonding pad metallization for stress sensitive semiconductor devices such as semiconductor lasers or the like. An attendant advantage is a diffusion barrier layer which inhibits the migration of conventional bonding materials such as indium solder.

REFERENCES:
patent: 3946334 (1976-03-01), Yonezu et al.
patent: 3959522 (1976-05-01), Ladany et al.
patent: 4023198 (1977-05-01), Malone et al.
patent: 4161701 (1979-07-01), Taketa et al.
patent: 4179534 (1979-12-01), Chang et al.
patent: 4319264 (1982-03-01), Gangulee et al.
patent: 4321617 (1982-03-01), Duda et al.

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