Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2011-08-02
2011-08-02
Le, Thao (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257SE21122, C257SE23020
Reexamination Certificate
active
07989962
ABSTRACT:
A bonding pad includes multiple metal layers, insulation layers disposed between the multiple metal layers, and a fixing pin coupled between the uppermost metal layer and an underlying metal layer of the multiple metal layers, where a bonding is performed on the uppermost metal layers.
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Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Le Thao
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