Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-09-12
2010-10-19
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S786000, C257SE23020
Reexamination Certificate
active
07816791
ABSTRACT:
A bonding pad on a substrate has a first metal structure establishing an electrical connection between a device and a bonding area, and a second metal structure arranged at the bonding area. The first metal structure extends, within the bonding area, at least over part of the bonding area between the substrate and the second metal structure, so as to contact the second metal structure, the second metal structure being harder than the first metal structure.
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Ahrens Carsten
Albers Sven
Gnannt Klaus
Krumbein Ulrich
Mackh Gunther
Infineon - Technologies AG
Parekh Nitin
Slater & Matsil L.L.P.
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