Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Patent
1996-08-29
1998-06-30
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
257786, 257734, 257341, H01L 2348, H01L 2943, H01L 29784
Patent
active
057738998
ABSTRACT:
Disclosed is a bonding pad for a semiconductor chip which prevents damage during a bonding process. In a semiconductor chip having conductive regions interconnected by a metal pattern, a metal region is disposed over the metal pattern. The metal region forms a bonding pad area over the conductive regions. In addition, the metal region is in direct contact with the metal pattern for substantially the whole bonding pad area. With this arrangement, the metal region absorbs mechanical stress induced when a bonding wire is bonded to the metal region during a bonding process. The metal region is sufficiently thick so as not to be perforated during the bonding process and the metal pattern is, therefore, not damaged.
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Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Thomas Tom
Williams Alexander Oscar
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