Bonding of silicon carbide directly to a semiconductor substrate

Details Bonding of silicon carbide directly to a semiconductor substrate Bonding of silicon carbide directly to a semiconductor substrate

1998-03-20

1999-03-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257200, 438931, 438973, H01L 310312

Patent

active

058775161

ABSTRACT:
A module and a method of making the module is disclosed. The module is formed from a semiconductor substrate and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes.

REFERENCES:
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patent: 3920492 (1975-11-01), Sugita et al.
patent: 4560589 (1985-12-01), Endou et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 5049950 (1991-09-01), Fujii et al.
patent: 5759908 (1998-06-01), Steckl et al.
Steckl et al, "SiC Silicon-on-Insulator Structures By Direct Carbonization onversion and Postgrowth From Silacyclobutane", Jun. 1994.
J. Electrochem. Soc., vol. 141, No. 6, Jun., 1994, pp. L66-L68.

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