Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2006-11-09
2010-11-23
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
C257SE21347
Reexamination Certificate
active
07838396
ABSTRACT:
A semiconductor substrate is bonded to a joining face of a sheet and is dividable along predetermined dividing lines of the semiconductor substrate by expanding the sheet so as to form semiconductor chips. A bonding layer for bonding a substrate face of the semiconductor substrate and the joining face of the sheet to each other can be formed in each region encircled with the predetermined dividing lines, between the substrate face and the joining face of the sheet. Thus, when the substrate face of the semiconductor substrate and the joining face of the sheet are bonded to each other, the bonding layer does not reach any of the predetermined dividing lines set between the regions. The bonding layer can be formed in dotted segments or a pattern of lattice between the substrate face of the semiconductor substrate and the joining face of the sheet.
REFERENCES:
patent: 5304418 (1994-04-01), Akada et al.
patent: 5476565 (1995-12-01), Akada et al.
patent: 5824177 (1998-10-01), Yoshihara et al.
patent: 7169248 (2007-01-01), Kirby et al.
patent: 2005/0026415 (2005-02-01), Connell et al.
patent: 2005/0194364 (2005-09-01), Fukuyo et al.
patent: 2005/0202596 (2005-09-01), Fukuyo et al.
patent: 2005/0224959 (2005-10-01), Kwon et al.
patent: 2006/0011593 (2006-01-01), Fukuyo et al.
patent: 2006/0148212 (2006-07-01), Fukuyo et al.
patent: 2006/0197094 (2006-09-01), Sugawara
patent: 2007/0158314 (2007-07-01), Fukumitsu et al.
patent: A-2003-218191 (2003-07-01), None
patent: A-2004-349456 (2004-12-01), None
Office Action dated Feb. 22, 2008 in corresponding German Patent Application No. 10 2006 053 958.3-43 (and English translation).
German Office Action dated Sep. 9, 2009 from the German Patent Office in the corresponding German patent application No. 10 2006 053 958.3-43 (and English translation).
Asai Makoto
Maruyama Yumi
Chaudhari Chandra
Denso Corporation
Posz Law Group , PLC
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