Bonding method and apparatus

Details Bonding method and apparatus Bonding method and apparatus

2005-04-06

2010-02-09

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S455000, C438S974000, C257SE21499, C257SE21506

Reexamination Certificate

active

07659148

ABSTRACT:
A bonding method and an apparatus that enable metal bonding under the atmospheric pressure and at room temperature, wherein the surfaces of objects (1b,2a) to be bonded together are cleaned in an initial cleaning step (S1) to remove bonding inhibitor substances (G) such as oxides and adhered substances; one (1b) of the bonding surfaces is provided with an uneven profile with a predetermined roughness in a surface roughness control step (S3); a surface treatment step (S5) is performed to remove the substances (F) that have been removed but adhered to the bonding surfaces (1b,2a) again; and the uneven bonding surface (1b) is pressed against the other bonding surface (2a) to bond them together.

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