Metal treatment – Compositions – Heat treating
Patent
1981-11-09
1983-05-24
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
65 40, 65 58, 1562731, 29 2541, H01L 2102, H01G 700, C03B 2320, C03C 2700
Patent
active
043848990
ABSTRACT:
A method of utilizing anodic bonding to bond a conductive semiconductor wafer to a metallized dielectric glass plate so as to form a capacitive pressure sensing element is disclosed. The method includes positioning the semiconductor wafer in contact with the glass plate, heating the wafer and glass plate and applying a substantial positive DC potential to the semiconductor wafer and metallization on the glass plate while applying a negative DC voltage potential to the glass plate. The glass plate metallization forms one capacitor plate of the capacitive pressure sensing element while the semiconductor wafer forms the other capacitor plate. By applying the same voltage potential to the glass plate metallization and the semiconductor wafer during anodic bonding of the wafer to the glass plate, the corona field between the glass plate metallization and the semiconductor wafer is reduced thereby improving the bond between the wafer and the glass plate and reducing the possibility of arcing between the semiconductor wafer and the glass plate metallization. Also sodium ion migration to the glass plate metallization and any metallization connected to this metallization is inhibited wherein the ion migration would impair the subsequent solderability of these metallizations.
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Electrostatic Bonding Article 19742.
Gillman James W.
Melamed Phillip H.
Motorola Inc.
Pristelski James S.
Rutledge L. Dewayne
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