Bonding IC die to TSV wafers

Details Bonding IC die to TSV wafers Bonding IC die to TSV wafers

2011-03-29

2011-03-29

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S109000, C438S459000, C438S465000, C257SE21705

Reexamination Certificate

active

07915080

ABSTRACT:
A method for bonding IC die to TSV wafers includes bonding at least one singulated IC die to respective ones of a plurality of IC die on a TSV wafer that includes a top semiconductor surface and TSV precursors including embedded TSV tips to form a die-wafer stack. The die-wafer stack is thinned beginning from the bottom surface of the TSV wafer to form a thinned die-wafer stack. The thinning includes exposing the embedded TSV tips to provide electrical access thereto from the bottom surface of the TSV wafer. The thinned die-wafer stack can be singulated to form a plurality of thinned die stacks.

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