Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-11-07
2006-11-07
Malsawma, Lex H. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Reexamination Certificate
active
07132721
ABSTRACT:
A method of bonding and packaging components of Micro-Electro-Mechanical Systems (MEMS) and MEMS based devices using a Solid-Liquid InterDiffusion (SLID) process is provided. A micro-machine is bonded to a micro-machine chip using bonding materials. A layer of chromium is first deposited onto surfaces of the micro-machine and the micro-machine chip followed by a layer of gold. Subsequently, a layer of indium is deposited between the layers of gold, and the surface of the micro-machine is pressed against the surface of the micro-machine chip forming a gold-indium alloy to serve as a bond between the micro-machine and the micro-machine chip. In addition, a cover is bonded to the micro-machine chip in the same manner providing a hermetic seal for the MEMS based device.
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International Search Report, Jan. 28, 2004.
U.S. Appl. No. 10/083,978, filed Feb. 27, 2002.
Ford Carol M.
Platt William P.
Honeywell International , Inc.
Malsawma Lex H.
McDonnell Boehnen & Hulbert & Berghoff LLP
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