Bonding and probing pad structures

Details Bonding and probing pad structures Bonding and probing pad structures

2008-07-08

2008-07-08

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S779000, C257S780000, C257S786000, C257SE23020

Reexamination Certificate

active

07397127

ABSTRACT:
A pad structure includes a first metal-containing layer formed over a substrate. A first passivation layer is formed over the first metal-containing layer. The first passivation layer has a first opening partially exposing the first metal-containing layer. A pad layer is formed over the first passivation layer, covering the first opening. The pad layer includes a probing region configured to be contacted by a probe and a bonding region configured to have a wired bonded to it. The probing region contacts the first metal-containing layer through the first opening, and the bonding region overlies a portion of the first passivation layer.

REFERENCES:
patent: 6614091 (2003-09-01), Downey
patent: 2003/0173667 (2003-09-01), Yong et al.

Affiliated with

Also associated with

Rating

Bonding and probing pad structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bonding and probing pad structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bonding and probing pad structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2796586