Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2006-08-22
2008-11-04
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
Reexamination Certificate
active
07446018
ABSTRACT:
A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer of a second conductivity disposed on the first device layer, a third device layer of the first conductivity disposed on the second device layer and a fourth device layer of the second conductivity disposed on the third device layer. A trench is formed in the multi-layer device stack. A mesa is defined by the trench. The mesa has first and second sidewalls. A first anode/cathode layer is disposed on a first sidewall of the multi-layer device stack, and a second anode/cathode layer is disposed on the second sidewall of the multi-layer device stack.
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Brogan Conor
Griffin Hugh J.
MacNamara Cormac
Wilson Robin
Icemos Technology Corporation
Lee Calvin
Panitch Schwarze Belisario & Nadel LLP
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