Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1995-04-28
1998-12-15
Quach, T. N.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438406, 148DIG12, H01L 2130
Patent
active
058496270
ABSTRACT:
Low temperature wafer bonding using a chemically reacting material between wafers to form a bonded zone to bond two wafers together. Examples include silicon wafers with a silicon-oxidizing bonding liquid which also permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Silicon wafers also may use solid reactants which include deposited layers of metal and polysilicon to form silicide bonded zones. Oxidizers such as nitric acid may be used in the bonding liquid, and a bonding liquid may be used in conjunction with a solid bonding reactant. Dielectric layers on silicon wafers may be used when additional silicon is provided for the bonding reactions. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening and buried resistors.
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Buller James F.
Linn Jack H.
Lowry Robert K.
Rouse George V.
Harris Corporation
Quach T. N.
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