Bonded wafer processing with metal silicidation

Details Bonded wafer processing with metal silicidation Bonded wafer processing with metal silicidation

1994-12-08

1996-10-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437200, 437225, 437974, 148DIG12, H01L 2130, H01L 2146

Patent

active

055696201

ABSTRACT:
Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon-nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers.

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M. Shimbo, K. Furukawa, K. Fukuda, & K. Tanzawa, "Silicon-to-Silicon Direct Bonding Method", J. Appl. Physics 60 (8), pp. 2987-2989, Oct. 15, 1986.
Sorab K. Ghandhi, "Silicides", VLSI Fabrication Principles, John Wiley & Sons, pp. 435-437, 1983.
Stanley Wolf & Richard N. Tauber, "Silicon Processing for the VLSI Era", Lattice Press, vol. 1., pp. 390-391, 1986.
S. P. Murarka, "Refractory Silicides For Integrated Circuits", J. Vac. Science Technology, 17 (4), pp. 775-792, Jul./Aug. 1980.

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