Bonded wafer processing with metal silicidation

Fishing – trapping – and vermin destroying

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437 62, 437 86, 437200, 437974, 148DIG12, 148DIG147, H01L 2130, H01L 2146

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053875559

ABSTRACT:
Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers. The silicide bonding takes place in the presense of a liquid oxidizer such as aqueous solution of HNO.sub.3 and H.sub.2 O.sub.2.

REFERENCES:
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patent: 5098861 (1992-03-01), Blackstone
patent: 5102821 (1992-04-01), Moslehi
patent: 5169472 (1992-12-01), Goebel
Wolf et al., Silicon Processing, vol. 1, Lattice Press, 1986, pp. 390-391.
Muranka, S., Refractory Silicides . . . , J. Vac. Sci. Technol. 17(4), Jul./Aug. 1980, pp. 775-792.
Ghandhi, S. K., VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 435-437.
Shimbo, S., "Silicon-to-Silicon direct bonding method", J. Appl. Phys., 60(8), 15, Oct. 1986, p. 2987.

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