Fishing – trapping – and vermin destroying
Patent
1992-09-03
1995-02-07
Quach, T. N.
Fishing, trapping, and vermin destroying
437 62, 437 86, 437200, 437974, 148DIG12, 148DIG147, H01L 2130, H01L 2146
Patent
active
053875559
ABSTRACT:
Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers. The silicide bonding takes place in the presense of a liquid oxidizer such as aqueous solution of HNO.sub.3 and H.sub.2 O.sub.2.
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Wolf et al., Silicon Processing, vol. 1, Lattice Press, 1986, pp. 390-391.
Muranka, S., Refractory Silicides . . . , J. Vac. Sci. Technol. 17(4), Jul./Aug. 1980, pp. 775-792.
Ghandhi, S. K., VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 435-437.
Shimbo, S., "Silicon-to-Silicon direct bonding method", J. Appl. Phys., 60(8), 15, Oct. 1986, p. 2987.
Buller James F.
Linn Jack H.
Lowry Robert K.
Rouse George V.
Harris Corporation
Quach T. N.
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