bonded wafer processing

Details bonded wafer processing bonded wafer processing

1997-01-15

1998-07-14

Dang, Trung

Fishing, trapping, and vermin destroying

437 63, 437 64, 437 67, 148DIG50, H01L 2176

Patent

active

057803110

ABSTRACT:
Warpage in a bonded wafer is limited by maintenance of a stress compensation layer on the backside of the bonded wafer during device fabrication processing. One embodiment applies a sacrificial polysilicon layer over a stress compensation silicon dioxide layer for bonded silicon wafers. The fabrication processing consumes the polysilicon layer but not the stress compensation silicon dioxide.

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