Bonded wafer processing

Details Bonded wafer processing Bonded wafer processing

1992-07-28

1994-11-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 86, 437974, 148DIG12, 257347, 257524, H01L 21265

Patent

active

053626672

ABSTRACT:
Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.

REFERENCES:
patent: 4878957 (1989-11-01), Yamaguchi et al.
Haisma et al., Japanese Journal Appl. Phys., vol. 28, No. 8, (1989).

Affiliated with

Also associated with

Rating

Bonded wafer processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bonded wafer processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bonded wafer processing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1782170