Bonded wafer processing

Details Bonded wafer processing Bonded wafer processing

1995-12-15

1998-03-17

Fourson, George R.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438406, 438920, H01L 2176

Patent

active

057286248

ABSTRACT:
Low temperature wafer bonding using a silicon-oxidizing bonding liquid permits introduction of radiation hardening dopants and electrically active dopants as constituents of the bonding liquid. Oxidizers such as nitric acid may be used in the bonding liquid. Dielectric layers on the device wafer and the handle wafer may be used when additional silicon is provided for the oxidative bonding. Integrated circuits fabricated from such bonded wafers may have buried layers and radiation hardening with device silicon too thick for implantation.

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patent: 5387555 (1995-02-01), Linn et al.
Haisma, et al., "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations", Japanese Journal Appl. Phys., vol. 28, No. 8, 1989, Japan.
P.J. Burkhardt, "Composite Silicon Dioxide-Silicon Oxynitride Insulating Layer", IBM Technical Disclosure Bulletin, vol. 13, No. 1, Jun. 1970.

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