Bonded wafer process incorporating diamond insulator

Details Bonded wafer process incorporating diamond insulator Bonded wafer process incorporating diamond insulator

1993-03-11

1993-12-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 437974, 437100, 148DIG12, 148DIG135, H01L 2176

Patent

active

052721043

ABSTRACT:
A semiconductor-on-insulator structure incorporating a layer of diamond material and method for preparing such. The structure comprises a layer containing diamond material and having a first surface. A layer of silicon nitride is formed on the first surface and a layer of semiconductor material is positioned over the silicon nitride layer. In one embodiment of the method there is provided a removable deposition surface. A layer of crystalline diamond material is formed on the deposition surface. A first surface of the diamond material is separated from the deposition surface. The structure is useful for formation of integrated circuits thereon.

REFERENCES:
patent: 4981818 (1991-01-01), Anthony et al.
patent: 5131963 (1992-07-01), Ravi
patent: 5173761 (1992-12-01), Dreifus et al.
patent: 5186785 (1993-02-01), Annamalai

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