Bonded wafer and method of producing bonded wafer

Details Bonded wafer and method of producing bonded wafer Bonded wafer and method of producing bonded wafer

2006-05-30

2006-05-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S197000, C438S455000, C438S475000

Reexamination Certificate

active

07052974

ABSTRACT:
The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.

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