Metal treatment – Barrier layer stock material – p-n type
Patent
1995-05-17
1997-02-18
Dang, Trung
Metal treatment
Barrier layer stock material, p-n type
437 61, 437 62, 437974, 148DIG12, H01L 2120
Patent
active
056037791
ABSTRACT:
A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon exposure to air. The polymer seal on the wafers to be bonded are pressed together and the wafers are annealed to form the bonded wafer in a non-oxidizing ambient. The bond junction formed is primarily silicon to silicon and silicon to carbon bonds.
REFERENCES:
patent: 4939101 (1990-07-01), Black et al.
patent: 5383993 (1995-01-01), Katada et al.
patent: 5407506 (1995-04-01), Goetz et al.
patent: 5407856 (1995-04-01), Quenzer et al.
patent: 5451547 (1995-09-01), Himi et al.
Bajor George
Linn Jack H.
Rouse George V.
Dang Trung
Deffebach, III Harry L.
Harris Corporation
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