Bonded wafer and method of fabrication thereof

Details Bonded wafer and method of fabrication thereof Bonded wafer and method of fabrication thereof

1995-05-17

1997-02-18

Dang, Trung

Metal treatment

Barrier layer stock material, p-n type

437 61, 437 62, 437974, 148DIG12, H01L 2120

Patent

active

056037791

ABSTRACT:
A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon exposure to air. The polymer seal on the wafers to be bonded are pressed together and the wafers are annealed to form the bonded wafer in a non-oxidizing ambient. The bond junction formed is primarily silicon to silicon and silicon to carbon bonds.

REFERENCES:
patent: 4939101 (1990-07-01), Black et al.
patent: 5383993 (1995-01-01), Katada et al.
patent: 5407506 (1995-04-01), Goetz et al.
patent: 5407856 (1995-04-01), Quenzer et al.
patent: 5451547 (1995-09-01), Himi et al.

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