Bonded wafer and method for producing bonded wafer

Details Bonded wafer and method for producing bonded wafer Bonded wafer and method for producing bonded wafer

2007-08-31

2011-11-01

Bryant, Kiesha (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257S627000, C257S628000, C257SE21088, C438S459000

Reexamination Certificate

active

08048767

ABSTRACT:
A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle of 0-0.1° (compound angle) with respect to a predetermined crystal face is used in each of the silicon wafer for active layer and silicon wafer for support substrate.

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