Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-09-19
1998-04-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257618, H01L 2906
Patent
active
057448523
ABSTRACT:
A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon exposure to air. The polymer seal on the wafers to be bonded are pressed together and the wafers are annealed to form the bonded wafer in a non-oxidizing ambient. The bond junction formed is primarily silicon to silicon and silicon to carbon bonds.
REFERENCES:
patent: 5459335 (1995-10-01), Matsushita et al.
Bajor George
Linn Jack H.
Rouse George V.
Crane Sara W.
Deffebach, III Harry L.
Harris Corporation
Potter Roy
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