Bonded thin-film structures for optical modulators and...

Details Bonded thin-film structures for optical modulators and... Bonded thin-film structures for optical modulators and...

2007-05-15

2007-05-15

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S106000, C438S455000

Reexamination Certificate

active

10915081

ABSTRACT:
The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a single crystal silicon material is bonded to a thin-film dielectric material to form a silicon-insulator-silicon thin-film structure for an optical modulator.

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