Bonded substrate, surface acoustic wave chip, and surface...

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

Reexamination Certificate

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C310S344000

Reexamination Certificate

active

11069048

ABSTRACT:
A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.

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H.Sato, et al.; “Temperature Stable SAW Devices Using Directly Bonded LiTaO3/Glass Substrates”; 1998 IEEE Ultrasonics-Symposiu; 1998, pp. 335-338.
Low Temperature Bonding by Means of the Surface Activated Bonding Method; Tadatomo Suga (Research Center for Advanced Science and Technology, The University of Tokyo, Japan) pp. 496-612.
Room-Temperature Bonding of Silicon Wafers by Means of the Surface Activation Method; Report of Mechanical Engineering Laboratory No. 189.

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