Bonded substrate of semiconductor elements having a high withsta

Details Bonded substrate of semiconductor elements having a high withsta Bonded substrate of semiconductor elements having a high withsta

1989-10-10

1991-01-08

Hille, Rolf

357 47, 357 59, H01L 27120, H01L 2720, H01L 2940

Patent

active

049840525

ABSTRACT:
A bonded substrate comprises a first semiconductor substrate in which a plurality of semiconductor elements are formed, a second semiconductor substrate adhered to the first semiconductor substrate so as to support it by means of an insulating layer interposed therebetween, a first semi-insulating polysilicon layer interposed between the first semiconductor substrate and the insulating layer, and a second semi-insulating polysilicon layer interposed between the insulating layer and the second semiconductor substrate. The semi-insulating polysilicon layers serve to reduce the voltage applied to the insulating layer and to prevent the insulating layer from being etched.

REFERENCES:
patent: 3990102 (1976-11-01), Okuhara et al.
patent: 4131910 (1978-12-01), Hartman et al.
patent: 4242697 (1980-12-01), Berthold et al.
patent: 4611386 (1986-09-01), Goto
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4755863 (1988-07-01), Maeda et al.
patent: 4792834 (1988-12-01), Uchida
patent: 4924284 (1990-05-01), Beyer et al.

Affiliated with

Also associated with

Rating

Bonded substrate of semiconductor elements having a high withsta does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bonded substrate of semiconductor elements having a high withsta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bonded substrate of semiconductor elements having a high withsta will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-939035