Bonded IC substrate with a high breakdown voltage and large curr

Details Bonded IC substrate with a high breakdown voltage and large curr Bonded IC substrate with a high breakdown voltage and large curr

1996-04-01

1998-12-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257 66, 257 67, 257505, 257510, 257551, 257517, 438427, H01L 2900, H01L 2976, H01L 31036, H01L 31112

Patent

active

058474382

ABSTRACT:
A semiconductor device includes a groove formed in a surface of a first semiconductor substrate of one conductivity type in order to partition and isolate first and second device regions. A first insulating film on the first semiconductor substrate of the first device region also contacts the groove. A second insulating film covers an inner wall of the groove. The first insulating film is thicker than the second film in order to increase the breakdown voltage and facilitate carrying a higher current. This thickness relationship also aids manufacturing.

REFERENCES:
patent: 4982266 (1991-01-01), Chatterjee
patent: 5097314 (1992-03-01), Nakagawa et al.
patent: 5397912 (1995-03-01), Sundaram
"High Voltage, New Driver IC Technique Based on Silicon Wafer Direct-Bonding (SDB)," Akio Nakagawa et al, 1988 IEEE, PESC '88 Record (Apr. 1988), pp. 1325-1329.

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