Bonded electrical contact for thermoelectric semiconductor eleme

Details Bonded electrical contact for thermoelectric semiconductor eleme Bonded electrical contact for thermoelectric semiconductor eleme

1974-01-28

1976-10-26

Behrend, Harvey E.

Batteries: thermoelectric and photoelectric

Thermoelectric

Having particular thermoelectric composition

136238, H01V 114

Patent

active

039881717

ABSTRACT:
A bonded electrical contact and method for a thermoelectric element. A thin layer of a ductile diffusion barrier, which is non-poisonous to thermoelectric materials, such as iron, tungsten, molybdenum, or niobium, is disposed between the thermoelectric material and a contacting shoe, such as stainless steel, which has poisonous alloy constituents. The thermal expansion coefficient of the diffusion barrier, which does not match that of the thermoelectric material, is overridden by that of the shoe, whose coefficient does correspond with that of such high expansion thermoelectrics as the telluriden.

REFERENCES:
patent: 3082277 (1963-03-01), Lane et al.
patent: 3208835 (1965-09-01), Duncan et al.
patent: 3306784 (1967-02-01), Roes
patent: 3382109 (1968-05-01), Kendall, Jr. et al.

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