Bonded cathode and electrode structure with layered insulation,

Details Bonded cathode and electrode structure with layered insulation, Bonded cathode and electrode structure with layered insulation,

1979-05-09

1981-02-10

Chatmon, Jr., Saxfield

Electric lamp and discharge devices

With support and/or spacing structure for electrode and/or...

For plural electrodes of discharge device

313348, 313107, 313250, 29 251, 29 2516, H01J 188, H01J 1942

Patent

active

042504287

ABSTRACT:
The variety of technologies that have been applied in the development of a onded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium, BM, and Si.sub.3 N.sub.4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to eliminate nitrogen evolution problems. Films of Si.sub.3 N.sub.4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si.sub.3 N.sub.4 from the cathode pores.

REFERENCES:
patent: 3373307 (1968-03-01), Zalm et al.
patent: 3402314 (1968-09-01), Vlaardingerbroek et al.
patent: 3599031 (1971-08-01), Beggs
patent: 3648096 (1972-03-01), Beggs
patent: 3967150 (1976-06-01), Lien et al.
patent: 4083811 (1978-04-01), Bachmann et al.
patent: 4096406 (1978-06-01), Miram et al.
patent: 4165473 (1979-08-01), Falce

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