Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2008-11-12
2010-11-09
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S784000, C257SE23152, C257SE21522, C257SE21627, C438S612000
Reexamination Certificate
active
07830005
ABSTRACT:
An integrated circuit includes: a substrate; and a bond pad array on the substrate. The bond pad array includes: a row of inner bond pads, each inner bond pad positioned with respect to a plurality of inner pad openings; a plurality of first inner metal layers respectively coupled to the inner bond pads for transmitting signals between the inner pads and an internal circuit, where at least one first inner metal layer has a width less than a width of a corresponding inner bond pad; a row of outer bond pads, staggered with respect to the row of inner bond pads; and a plurality of first outer metal layers respectively coupled to the outer bond pads for transmitting signals between the outer pads and the internal circuit, where at least one inner bond pad overlaps adjacent first outer metal layers.
REFERENCES:
patent: 6856022 (2005-02-01), Nojiri et al.
patent: 7115984 (2006-10-01), Poo et al.
patent: 7565019 (2009-07-01), Dong et al.
patent: 2005/0263885 (2005-12-01), Nakamura et al.
Hsiao Chuan-Cheng
Jao Che-Yuan
Li Hung-Sung
Lin I-Cheng
Hsu Winston
Lee Hsien-ming
Margo Scott
Mediatek Inc.
Teng Min-Lee
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