Body bias compensation for aged transistors

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed

Reexamination Certificate

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C438S012000, C438S014000, C438S017000

Reexamination Certificate

active

07338817

ABSTRACT:
Embodiments of the invention include on-chip transistor degradation detection and compensation. In one embodiment of the invention, an integrated circuit is provided including a circuit with a body bias terminal coupled to a body of one or more transistors to receive a body bias voltage; a programmable degradation monitor to detect aging of transistors, and a body bias voltage generator coupled to the circuit and the programmable degradation monitor. The body bias voltage generator to adjust the body bias voltage coupled into the circuit in response to transistor aging detected by the programmable degradation monitor. The programmable degradation monitor includes a reference ring oscillator, an aged ring oscillator, and a comparison circuit. The comparison circuit to compare data delays in the reference ring oscillator and the aged ring oscillator to detect transistor aging within the integrated circuit.

REFERENCES:
patent: 6535013 (2003-03-01), Samaan
patent: 6597218 (2003-07-01), Gauthier et al.
patent: 6724268 (2004-04-01), Takahashi
patent: 6778024 (2004-08-01), Gupta et al.
patent: 6903564 (2005-06-01), Suzuki
patent: 7129800 (2006-10-01), Gauthier et al.
patent: 2005/0134394 (2005-06-01), Liu
patent: 2005/0140418 (2005-06-01), Muniandy et al.
U.S. Appl. No. 11/096,777, filed Mar. 31, 2005, Liu et al.
Office Action mailed Apr. 18, 2006 for co-pending application No. 10/745,427.

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