Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-01-10
2006-01-10
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S052000, C257S054000, C257S646000, C347S068000
Reexamination Certificate
active
06984843
ABSTRACT:
A board for an electronic device is provide comprising a substrate having an amorphous layer, a buffer layer formed on the amorphous layer, the buffer layer having an orientation at least in the direction of its thickness, and a conductive oxide layer formed on the buffer layer by means of epitaxial growth, the conductive oxide layer having a metal oxide of a perovskite structure. The buffer layer contains at least one of the group consisting of a metal oxide of a NaCl structure and a metal oxide of a fluorite structure. Furthermore, the buffer layer12is formed by epitaxial growth in the cubic crystal (100) orientation.
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Higuchi Takamitsu
Iwashita Setsuya
Miyazawa Hiromu
Harness & Dickey & Pierce P.L.C.
Nelms David
Seiko Epson Corporation
Tran Long
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